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化合物半导体应用前景广阔，市场规模持续扩大

化合物半导体是由两种及以上元素构成的半导体材料，目前常用的材料有GaAs、GaN以及SiC等，作为第二代和第三代半导体的主要代表，因其在高功率、高频率等方面特有的优势，在信息通信、光电应用以及新能源汽车等产业中有着不可替代的地位。

多年以来，世界各国始终对化合物半导体保持高度重视，出相关政策支持本国产业的发展，2017年美国、德国、日本等国家和组织启动了至少12项研发计划，总计投入研究经费达到6亿美元。借助各国政府的大力支持，自从1965年1支GaAs晶体管诞生以来，化合物半导体器件的制造技术取得了快速的进步，为化合物半导体的应用提供了坚实的基础。目前，随着ALD(原子层淀积)技术的逐渐成熟，化合物半导体HMET结构以及MOSFET结构的器件质量以及可靠性得到了提升，进一步提高了化合物半导体材料在高频高压应用领域的市场占有率。未来随着化合物半导体制造工艺的进一步提升，在逻辑应用方面取代传统硅材料，从而等效延续摩尔定律成为了化合物半导体更为长远的发展趋势。

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